S07B-M, s07d-m, s07g-m, s07j-m, s07m-m document number 85191 rev. 1.1, 20-aug-10 vishay semiconductors www.vishay.com 1 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diode, high voltage features ? for surface mounted applications ? low profile package ? ideal for automated placement ? glass passivated ? high temperature soldering: 260 c/10 s at terminals ? wave and reflow solderable ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: do-219ab (smf) polarity: band denotes cathode end weight: approx. 15 mg packaging codes/options: 18/10k per 13" reel (8 mm tape) 08/3k per 7" reel (8 mm tape) parts table 17249 part ordering code marking remarks S07B-M S07B-M-18 or S07B-M-08 ub tape and reel s07d-m s07d-m-18 or s07d-m-08 ud tape and reel s07g-m s07g-m-18 or s07g-m-08 ug tape and reel s07j-m s07j-m-18 or s07j-m-08 uj tape and reel s07m-m s07m-m-18 or s07m-m-08 um tape and reel
www.vishay.com 2 document number 85191 rev. 1.1, 20-aug-10 S07B-M, s07d-m, s07g-m, s07j-m, s07m-m vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com absolute maximum ratings t amb = 25 c, unless otherwise specified note: 1) averaged over any 20 ms period thermal characteristics t amb = 25 c, unless otherwise specified note: 1) mounted on epoxy substrate with 3 mm x 3 mm cu pads ( 40 mm thick) electrical characteristics t amb = 25 c, unless otherwise specified note: 1) pulse test: 300 pulse width, 1 % duty cycle parameter test condition part symbol value unit maximum repetitive peak reverse voltage S07B-M v rrm 100 v s07d-m v rrm 200 v s07g-m v rrm 400 v s07j-m v rrm 600 v s07m-m v rrm 1000 v maximum rms voltage S07B-M v rms 70 v s07d-m v rms 140 v s07g-m v rms 280 v s07j-m v rms 420 v s07m-m v rms 700 v maximum dc blocking voltage S07B-M v dc 100 v s07d-m v dc 200 v s07g-m v dc 400 v s07j-m v dc 600 v s07m-m v dc 1000 v maximum average forward rectified current t tp = 75 c 1) i f(av) 1.5 a t a = 65 c 1) i f(av) 0.7 a peak forward surge current 8.3 ms single half sine-wave t l = 25 c i fsm 25 a parameter test condition symbol value unit thermal resistance junction to ambient air 1) r thja 180 k/w operating junction and storage temperature range t j , t stg - 55 to + 150 c parameter test condition symbol min. ty p. max. unit maximum instantaneous forward voltage 1 a 1) v f 1.1 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 10 a t a = 125 c i r 50 a reverse recovery time i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 1.8 s typical capacitance at 4 v, mhz c j 4pf
S07B-M, s07d-m, s07g-m, s07j-m, s07m-m document number 85191 rev. 1.1, 20-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current derating curve figure 2. typical instantaneous forward characteristics 0 0.6 0. 8 1.2 1.0 0204060 8 0 100 120 140 160 a v erage for w ard c u rrent (a) am b ient temperat u re (c) 0.4 0.2 resisti v e or ind u cti v e load 3.0 mm x 3.0 mm 40 m thick copper pad areas 17375 100 1000 600 700 8 00 900 1000 1100 instantaneo u sfor w ard c u rrent (ma) instantaneo u sfor w ard v oltage (m v ) t j = 150 c t j =25 c t j = 100 c 17376 figure 3. typical instantaneous reverse characteristics figure 4. capacitance vs. reverse voltage instantaneo u sre v erse c u rrent ( a) instantaneo u sre v erse v oltage ( v ) 0 100 200 300 400 500 600 700 8 00 900 0.01 0.1 10 1 100 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 17377 v r ( v ) c(pf) 0 5 10 15 20 25 30 35 40 10 9 8 7 6 5 4 3 2 1 0 1737 8
www.vishay.com 4 document number 85191 rev. 1.1, 20-aug-10 S07B-M, s07d-m, s07g-m, s07j-m, s07m-m vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): do-219ab (smf) foot print re commendation: re v . 3 - date: 13. march 2007 doc u ment no.:s 8 - v -3915.01-001 (4) 1.3 (0.051) 1.3 (0.051) 2.9 (0.114) 1.4 (0.055) 2.9 (0.114) 2.7 (0.106) 3.9 (0.154) 3.5 (0.13 8 ) 0. 8 5 (0.033) 0.35 (0.014) 1.2 (0.047) 0. 8 (0.031) 1.9 (0.075) 1.7 (0.067) 1.0 8 (0.043) 0. 88 (0.035) 0.25 (0.010) 0.05 (0.002) 0.1 (0.004) 0 (0.000) 5 5 created - date: 15. fe b r u ary 2005 17247 detail z enlarged
S07B-M, s07d-m, s07g-m, s07j-m, s07m-m document number 85191 rev. 1.1, 20-aug-10 vishay semiconductors www.vishay.com 5 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com blistertape dimens ions for smf in millimeters 1 8 513 ps doc u ment- n o.: s 8 - v -3717.02-001 (3)
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